any changing of specification will not be informed individual mb105 thru MB107 voltage 600v ~ 1000v 1.0amp single phase surface mount bridge rectifier s http://www.secosgmbh.com elektronische bauelemente 01 -apr.-2005 rev. a page 1 of 2 uni t : mm absolute maximum ratings (ta = 25 o c) v rrm mb105 600 MB107 1000 mb106 800 v i f(av) a i fsm a t j t stg 30 -55 to +1 50 -55 to +1 50 8.3ms single half sine-wave item average forward current symbol conditions unit peak forward surge current operating junction temperature range 1.0 repetitive peak reverse voltage storage temperature range case : mb * internal constructure with gprc (glass passivated rectifier chip) inside * r o h s c o m p l i a n t l e a d - f r e e p r o d u c t * lead less chip form , no lead damage * lead-free solder joint , no wire bond & lead frame * low power loss , high efficiency * high current capability * plastic package has underwriters laboratory flammability classification 94v-0 features * ac/dc power supply * communication equipment application * 5,000 pieces per 13" (3308mm 2 mm) reel * 2 reels per box * 5 boxes per carton packing case : packed with frp substrate and epoxy underfilled terminals : pure tin plated (lead-free), solderable per mil-std-750, method 2026. polarity : laser cathode band marking weight : 0.07 gram mechanical data outline dimensions o c electrical characteristics (ta = 25 o c) v f i f = 0.4a i f = 1.0a item symbol conditions min. typ. v - - 0.87 0.95 0.90 1.00 max. unit forward voltage - 110 - r th(ja) junction to ambient (note) thermal resistance o c /w - 15 - r th(jl) junction to lead (note) pf - 25 - c j v r = 4v, f = 1.0 mhz junction capacitance ua - 0.08 5 i rrm repetitive peak reverse current v r = max. v rrm , ta = 25 o c 3.74 - - a 2 s i 2 t current squared time t < 8.3ms , ta = 25 o c notes : thermal resistance, junction to ambient, measured on pc board with 5.0mm 2 (0.03mm thick) land areas. marking : series code voltage class mbcr 10 ~ ~ amps class last digit of the year mfg week 3 .30 0.05 1.10 0.1 1.2 0.1 5.80 0.1 0.90 0.05 r ( 0 .2) 5.30 0.1 4.10 0.1 1.10 0.1 5.72 0.1 1.5 0.1 monting pad layout ~ ~ a s u f f i x o f ? - c ? s p e c i f i e s h a l o g e n - f r e e .
any changing of specification will not be informed individual mb 10 5 thru m b107 voltage 60 0v ~ 1000v 1.0amp single phase surface mount bridge rectifier s http://www.secosgmbh.com ele k troni sche bauelemente 01 - apr -200 5 rev. a page 2 of 2 fig.1 - for w ard current dera ting cur ve a verage for w ard rectified current , amperes 0.4 0.2 0.8 1.0 0.6 1.2 0 0 25 50 75 100 125 150 175 ambient tempera ture, o c 60 hz resistive or inductive load fig.2 - maximum non-repetitive peak for w ard surge current peak for w ard surge current , amperes number of cycles a t 60hz pulse width 8.3ms single half-sire-w ave (jedec method) 0 10 20 30 40 1 10 100 fig.4 - typical reverse characteristics per bridge element percent of ra ted peak reverse vol t age,% inst ant aneous reverse current , microamperes 0.01 0 0.10 1.0 10.0 100 tj=100 o c tj=25 o c 20 40 60 80 120 140 100 fig.5 - typical junction cap acit ance tj = 25 o c reverse vol t age, vol ts .1 1 junction cap acit ance, pf 100 .2 .4 1.0 2 4 10 20 40 100 10 fig.3 - typical inst ant aneous for w ard characteristics iinst ant aneous for w ard current , amperes 0.10 1.00 10.00 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 pulse width=300us inst ant aneous for w ard vol t age, vol ts t j =25 o c fig.1 - for w ard current dera ting cur ve a verage for w ard rectified current , amperes 0.4 0.2 0.8 1.0 0.6 1.2 0 0 25 50 75 100 125 150 175 ambient tempera ture, o c 60 hz resistive or inductive load fig.2 - maximum non-repetitive peak for w ard surge current peak for w ard surge current , amperes number of cycles a t 60hz pulse width 8.3ms single half-sire-w ave (jedec method) 0 10 20 30 40 1 10 100 fig.4 - typical reverse characteristics per bridge element percent of ra ted peak reverse vol t age,% inst ant aneous reverse current , microamperes 0.01 0 0.10 1.0 10.0 100 tj=100 o c tj=25 o c 20 40 60 80 120 140 100 fig.5 - typical junction cap acit ance tj = 25 o c reverse vol t age, vol ts .1 1 junction cap acit ance, pf 100 .2 .4 1.0 2 4 10 20 40 100 10 fig.3 - typical inst ant aneous for w ard characteristics iinst ant aneous for w ard current , amperes 0.10 1.00 10.00 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 pulse width=300us inst ant aneous for w ard vol t age, vol ts t j =25 o c fig.1 - for w ard current dera ting cur ve a verage for w ard rectified current , amperes 0.4 0.2 0.8 1.0 0.6 1.2 0 0 25 50 75 100 125 150 175 ambient tempera ture, o c 60 hz resistive or inductive load fig.2 - maximum non-repetitive peak for w ard surge current peak for w ard surge current , amperes number of cycles a t 60hz pulse width 8.3ms single half-sire-w ave (jedec method) 0 10 20 30 40 1 10 100 fig.4 - typical reverse characteristics per bridge element percent of ra ted peak reverse vol t age,% inst ant aneous reverse current , microamperes 0.01 0 0.10 1.0 10.0 100 tj=100 o c tj=25 o c 20 40 60 80 120 140 100 fig.5 - typical junction cap acit ance tj = 25 o c reverse vol t age, vol ts .1 1 junction cap acit ance, pf 100 .2 .4 1.0 2 4 10 20 40 100 10 fig.3 - typical inst ant aneous for w ard characteristics iinst ant aneous for w ard current , amperes 0.10 1.00 10.00 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 pulse width=300us inst ant aneous for w ard vol t age, vol ts t j =25 o c fig.1 - for w ard current dera ting cur ve a verage for w ard rectified current , amperes 0.4 0.2 0.8 1.0 0.6 1.2 0 0 25 50 75 100 125 150 175 ambient tempera ture, o c 60 hz resistive or inductive load fig.2 - maximum non-repetitive peak for w ard surge current peak for w ard surge current , amperes number of cycles a t 60hz pulse width 8.3ms single half-sire-w ave (jedec method) 0 10 20 30 40 1 10 100 fig.4 - typical reverse characteristics per bridge element percent of ra ted peak reverse vol t age,% inst ant aneous reverse current , microamperes 0.01 0 0.10 1.0 10.0 100 tj=100 o c tj=25 o c 20 40 60 80 120 140 100 fig.5 - typical junction cap acit ance tj = 25 o c reverse vol t age, vol ts .1 1 junction cap acit ance, pf 100 .2 .4 1.0 2 4 10 20 40 100 10 fig.3 - typical inst ant aneous for w ard characteristics iinst ant aneous for w ard current , amperes 0.10 1.00 10.00 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 pulse width=300us inst ant aneous for w ard vol t age, vol ts t j =25 o c fig.1 - forward current derating curve average forward rectified current, amperes 0.4 0.2 0.8 1.0 0.6 1.2 0 0 25 50 75 100 125 150 175 ambient temperature, o c 60 hz resistive or inductive load fig.2 - maximum non-repetitive peak forward surge current peak forward surge current, amperes number of cycles at 60hz pulse width 8.3ms single half-sire-wave (jedec method) 0 10 20 30 40 1 10 100 fig.4 - typical reverse characteristics per bridge element percent of rated peak reverse voltage,% instantaneous reverse current, microamperes 0.01 0 0.10 1.0 10.0 100 tj=100 o c tj=25 o c 20 40 60 80 120 140 100 fig.5 - typical junction capacitance tj = 25 o c reverse voltage, volts .1 1 junction capacitance, pf 100 .2 .4 1.0 2 4 10 20 40 100 10 fig.3 - typical instantaneous forward characteristics iinstantaneous forward current, amperes 0.10 1.00 10.00 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 pulse width=300us instantaneous forward voltage, volts t j =25 o c
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